| PART |
Description |
Maker |
| IRF320-323 IRF321 IRF322 IRF323 IRF320 IRF720 IRF7 |
N-Channel Power MOSFETs, 3.0 A, 350-400 V N沟道功率MOSFET.0甲，350-400 V
TRI N PLUG M 0-48
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| IRFD123 IRFD120 IRFD122 IRFD121 RFD120 |
(IRFD120 / IRFD121 / IRFD122 / IRFD123) N-Channel Power MOSFETs
1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs 1.3a规范，以.1A的，80V00V.30.40 Ohm的N通道功率MOSFET
|
HARRIS[Harris Corporation]
Harris Semiconductor
Harris, Corp.
|
| FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| IRFU110 IRFR110 FN3275 |
From old datasheet system
4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs
(IRFR110 / IRFU110) N-Channel Power MOSFETs
|
HARRIS SEMICONDUCTOR
Intersil Corporation
|
| HUF75307D3 HUF75307D3S HUF75307P3 HUF75307D3ST HUF |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 15A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 55V的五（巴西）直| 15A条（丁）|52AA
15A, 55V, 0.090 Ohm N-Channel UltraFET Power MOSFETs
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs 15 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
15A, 55V, 0.099 Ohm, N-Channel UltraFET Power MOSFETs 15 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IXFM6N90 IXFH6N100 IXFH6N90 IXFM6N100 |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电2.0Ω的N沟道增强HiPerFET功率MOSFET) 6 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| FSYA254R4 FSYA254D FSYA254D1 FSYA254D3 FSYA254R FS |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 21 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射，抗SEGR N沟道功率MOSFET
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSYC260R4 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FS |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 46 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射，抗SEGR N沟道功率MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| IXFT66N20Q IXFH66N20Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs Q-Class 66 A, 200 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET Power MOSFETs Q-Class 66 A, 200 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| IXTP3N120 IXTA3N120 IXTP3N110 IXTA3N110 |
Discrete MOSFETs: Standard N-channel Types
High Voltage Power MOSFETs
|
IXYS[IXYS Corporation]
|
|
